| 摘要 |
<p>PURPOSE: A photomask for extreme ultraviolet ray lithography is provided to increase the photolithography process margin by improving the image contrast at the pattern edge. CONSTITUTION: A reflecting layer(210) is formed on a substrate(200). The reflecting layer comprises a diffraction layer(211) diffusing the extreme ultraviolet ray and a spacing layer(212) formed on the diffraction layer. A buffer layer(220) is formed on the reflecting layer. An absorbing layer(230) is formed on the buffer layer. The absorbing layer pattern absorbs the extreme ultraviolet ray.</p> |
