| 摘要 |
PURPOSE: A method for manufacturing a trench isolation layer for a semiconductor device is provided to prevent characteristic deterioration of a device by rounding the profile of a corner area of a device isolation trench which is close to a semiconductor substrate surface. CONSTITUTION: A pad oxide film, a pad nitride layer, and a pad TEOS layer are formed on a semiconductor substrate(100). An isolation trench(140) is formed in the semiconductor substrate using the pad oxide film, the pad nitride layer and the pad TEOS layer as an etching mask. The surface of the corner area of the trench and the surface of the semiconductor substrate are exposed by removing the pad oxide film, the pad nitride layer and the pad TEOS layer. The corner area of the trench is rounded through a chemical treatment process on the semiconductor substrate including the trench. An isolation film(160) is formed by depositing an insulation layer on the trench.
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