| 发明名称 |
METHOD TO IMPROVE ELECTRICAL LEAKAGE PERFORMANCE AND TO MINIMIZE ELECTROMIGRATION IN SEMICONDUCTOR DEVICES |
| 摘要 |
<p>Embodiments of methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices are generally described herein.</p> |
| 申请公布号 |
KR20100076982(A) |
申请公布日期 |
2010.07.06 |
| 申请号 |
KR20107008700 |
申请日期 |
2008.09.16 |
| 申请人 |
TEL EPION INC. |
发明人 |
RUSSELL NOEL;SHERMAN STEVEN;HAUTALA JOHN J. |
| 分类号 |
H01L21/768;H01L21/28;H01L21/3205 |
主分类号 |
H01L21/768 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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