| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method of a semiconductor device are provided to prevent the deterioration of mobility of a carrier in inversion mode by minimizing the gate depletion and the parasitic capacitance of a poly-silicon. CONSTITUTION: A first gate insulating layer(115) is formed in an active region of a semiconductor substrate. A second gate insulating layer(120) is formed on the first gate insulating layer. A third gate insulating layer(170) is formed on the second gate insulating layer. A silicone base-first gate is formed on the third gate insulating layer. A similar metal based-second gate(160) is formed on the first gate.</p> |
