| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an LSI for suppressing an increase in layout area caused by a word line keeper circuit added so as to reduce power consumption during stand-by by executing power supply separation between a memory cell array part and a peripheral circuit part. <P>SOLUTION: A word line keeper circuit 13 added so as to reduce power consumption during stand-by by executing power supply separation between the memory cell array part 10 of SRAM Macro and a peripheral circuit part, is formed by commonly using a dummy element in the dummy element area 14 of the memory cell array part. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
