| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist material sensitive to a high energy line and excellent in sensitivity and resolution at ≤300 nm wavelength and in oxygen plasma etching resistance. <P>SOLUTION: The resist material is prepared by adding an organopolysiloxane obtained by hydrolyzing and condensing a silane monomer shown by the formula (1'): R<SP>1</SP>SiX<SB>3</SB>(where R<SP>1</SP>is an organic group having an acid decomposable group; and X is halogen, hydroxy, a 1-10C alkoxy or a 1-10C acyl), or a silane monomer of the formula (1') and a silane monomer shown by the formula (1"): R<SP>0</SP>SiX<SB>3</SB>(where R<SP>0</SP>is an organic group having an adhesive group; and X denotes the same meaning as the above X), and a high molecular compound comprising a repeating unit b shown by formula (2) (where R<SP>2</SP>is H or the like; and R<SP>5</SP>is a silicon-containing group selected from formulae (3)-(5)). <P>COPYRIGHT: (C)2005,JPO&NCIPI |
