| 摘要 |
PROBLEM TO BE SOLVED: To reduce degradation of insulation reliability and to improve reliability of a copper wire. SOLUTION: This semiconductor device has: a semiconductor substrate 10; a first porous insulation film 11a and a second porous insulation film 11b each containing silicon (Si), carbon (C) and oxygen (O), and formed on the semiconductor substrate 10; first copper wires 12a embedded in the first porous insulation film 11a; second copper wires 12b and a copper via 22 respectively embedded in the second porous insulation film 11b; first metal cap films 13a formed on the first copper wires 12a; and second metal cap films 13b formed on the second copper wires 12b. In the first and second porous insulation films 11a, 11b, a C/Si ratio of at least each upper layer thereof is≥1.5, and the maximum diameter of holes included in at least the upper layers of the first and second porous insulation films 11a, 11b is≤1.3 nm. COPYRIGHT: (C)2010,JPO&INPIT |
