发明名称 Light-emitting device and method for manufacturing the same
摘要 A light-emitting element is disclosed that can drive at a low driving voltage and that has a longer lifetime than the conventional light-emitting element, and a method is disclosed for manufacturing the light-emitting element. The disclosed light-emitting element includes a plurality of layers between a pair of electrodes; and at least one layer among the plurality of layers contains one compound selected from the group consisting of oxide semiconductor and a metal oxide, and a compound having high hole transportation properties. Such the light-emitting element can suppress the crystallization of a layer containing one compound selected from the group consisting of oxide semiconductor and a metal oxide, and a compound having high hole transportation properties. As a result, a lifetime of the light-emitting element can be extended.
申请公布号 US7732808(B2) 申请公布日期 2010.06.08
申请号 US20040571891 申请日期 2004.09.24
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD 发明人 IKEDA HISAO;SAKATA JUNICHIRO
分类号 H01L35/24;H01L;H01L51/00;H05B33/10;H05B33/14;H05B33/22 主分类号 H01L35/24
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