发明名称 SPUTTERING SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a sputtering system which can suitably and sufficiently improve the coverage properties of a sputtering deposited film. SOLUTION: The sputtering system 100 includes: a vacuum film deposition chamber 30 where a substrate 70 and a target 35B are arranged; a plasma gun 40 guiding plasma 27 to a film deposition space 30A in the vacuum film deposition chamber 30 between the substrate 70 and the target 35B; a deflection electrode 60 arranged at the film deposition space 30A; a first power source 50 applying positive voltage to the deflection electrode 60; and a second power source 52 applying negative voltage to the target 35B. Then, based on such positive-negative voltage, the incidence direction to the target 35B of Ar<SP>+</SP>drifting from the plasma 27 to the target 35B is controlled. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010121184(A) 申请公布日期 2010.06.03
申请号 JP20080296505 申请日期 2008.11.20
申请人 SHINMAYWA INDUSTRIES LTD 发明人 MIYAZAKI NORIAKI;IWASAKI YASUKUNI;TERAKURA ATSUHIRO;AKASHI DAISUKE;MARUNAKA MASAO;TSUCHIYA TAKAYUKI;NISHIDA ETSURO
分类号 C23C14/34;H01L21/285 主分类号 C23C14/34
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