| 摘要 |
In the nitride semiconductor heterojunction field effect transistor of the present invention, the floating gate layer (32), as the third layer, is formed between the control gate electrode (34) and the AlGaN layer (11), and the potential for the electrons in the AlGaN layer (11), which is substantially neighboring the floating gate layer (32), is able to be substantially high, and then the channel is able to be depleted. Hence, no current can be flowed through the channel (no drain current) at the time of no gate voltage, as so-called stable normally-off operation can be obtained.
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