| 摘要 |
A method of evaluating laser trimming of a semiconductor device having a thin film resistor is disclosed. The method includes the steps of providing the thin film resistor and laser trimming the thin film resistor by creating a first trim cut. The first trim cut bisects the thin film resistor such that the thin film resistor is divided into a first portion and a second portion. Also, the method involves measuring the insulation resistance of the thin film resistor. In addition, the method involves evaluating the trim cut based on the measured insulation resistance.
|
