发明名称 High voltage protection for a thin oxide CMOS device
摘要 A circuit includes a voltage regulator (208) for outputting a voltage at a regulated level, a protection circuit (260), and a load circuit (210) coupled to the voltage regulator. The protection circuit includes means for preventing the voltage regulator from outputting a voltage at a level higher than the regulated level during a start-up period of the voltage regulator.
申请公布号 US7723962(B2) 申请公布日期 2010.05.25
申请号 US20070690569 申请日期 2007.03.23
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 PARKES, JR. JOHN J.;ZHONG KAI
分类号 H02P11/00;H02P9/00 主分类号 H02P11/00
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