| 摘要 |
Systems, methods, and substrates directed to growth of monocrystalline germanium (Ge) crystals are disclosed. In one exemplary implementation, there is provided a method for growing a monocrystalline germanium (Ge) crystal. Moreover, the method may include loading first raw Ge material into a crucible, loading second raw Ge material into a container for supplementing the Ge melt material, sealing the crucible and the container in an ampoule, placing the ampoule with the crucible into a crystal growth furnace, as well as melting the first and second raw Ge material and controlling the crystallizing temperature gradient of the melt to reproducibly provide monocrystalline germanium ingots with improved/desired characteristics. |
