| 摘要 |
<p>When a compound semiconductor layer is formed on a compound semiconductor substrate (40) by sequentially layering group-III nitride semiconductor crystalline layers on the compound semiconductor substrate (40) by means of an organometallic vapor deposition method, the compound semiconductor substrate (40) is installed within a reaction chamber with the crystal growth face thereof facing up, a protection member (60), whereon multiple grooves (63) are formed in a radiating manner on the side facing the crystal growth face, is installed above the compound semiconductor substrate (40), and a starting material gas is supplied to the interior of the reaction chamber through a first through-hole (61) provided in the center of the protection member (60). Thus, in the manufacture of a compound semiconductor using an organometallic vapor deposition method, a decrease in yield caused by reaction byproducts which have peeled off and which adhere to the substrate or to the epitaxial film on the substrate is suppressed.</p> |
