| 摘要 |
PROBLEM TO BE SOLVED: To provide a film forming device and a film-forming method, wherein a thin film comprising a material having getter action is hardly formed on a substrate and an impurity gas present in the atmosphere of a reaction chamber is effectively removed to increase the degree of vacuum in the reaction chamber. SOLUTION: The target 118 includes a magnetic material area 18a and a getter material area 18c comprising the getter material having the getter action, a shield member 21 is provided between a substrate 200 and the target 118 and has an opening part 21a for exposing the whole surface of the substrate 200 toward the magnetic material area 18a side and passing sputter particles produced from the getter material area 18a and a blocking part 21b for blocking the sputter particles produced from the getter material area 18c and having a getter film comprising getter material and formed on the surface. COPYRIGHT: (C)2010,JPO&INPIT
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