| 摘要 |
<p>PURPOSE: A method of fabricating a semiconductor device having a saddle-fin gate is provided to suppress depletion region generation within a gate electrode by forming a high doped region inside the gate electrode. CONSTITUTION: A substrate(31) comprises an element isolation film(32) and an active area(33). A saddle pin pattern(34) is formed by selectively etching the substrate. The saddle pin pattern comprises a moat area(M). The moat area comprises a surface lower than the top of the active area. The first gate conductive film(36) is formed along the saddle pin pattern. A doped region inside the first gate conductive film is formed by filling impurity into a first gate conductive film. A second gate conductive film(37) is formed on the first gate conductive film. The second gate conductive film covers the saddle pin pattern.</p> |
