发明名称 APPARATUS AND METHOD FOR MANUFACTURING POLY-SI THIN FILM
摘要 PURPOSE: A device and a method for manufacturing a polycrystalline silicon thin film are provided to reduce the overall time required for a process by simultaneously loading and unloading the substrate. CONSTITUTION: A substrate support(150) comprises an amorphous silicon thin film and a conductive thin film. A substrate loading/unloading unit(120) includes a substrate loading unit and a substrate unloading unit and simultaneously moves the substrate loading unit and the substrate unloading unit. An electrode(160) for applying power is installed on the other side of the chamber facing the substrate support. The electrode for applying the power generates joule heat by applying power to the conductive thin film and crystallizes the amorphous silicon thin film through the joule heat.
申请公布号 KR20100042942(A) 申请公布日期 2010.04.27
申请号 KR20080102164 申请日期 2008.10.17
申请人 ENSILTECH CORPORATION 发明人 RO, JAE SANG;HONG, WON EUI
分类号 H01L21/20 主分类号 H01L21/20
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