发明名称 SPUTTERING SYSTEM AND FILM DEPOSITION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a sputtering system where the increase in the temperature of an anode is suppressed and the suppression of particles is possible in a film deposition stage. SOLUTION: The sputtering system 10 at least includes: a vacuum tank 1; a target 2 arranged at the inside of the vacuum tank; a first power source 11 applying negative voltage to a target; a substrate stand 3 arranged so as to face the target within the vacuum tank; an anode 4 arranged so as to surround a space S located between the target and the substrate stand within the vacuum; and a second power source 12 applying positive potential to the anode. The anode forms a divided structure composed of: a first electrode 5 located in the vicinity of the target side; a second electrode 6 located in the vicinity of the substrate stand side; and a third electrode 7 located between the first electrode and the second electrode. Then, the second power source is composed so as to control the positive potential to be applied to the anode. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010090445(A) 申请公布日期 2010.04.22
申请号 JP20080262597 申请日期 2008.10.09
申请人 ULVAC JAPAN LTD 发明人 KADOKURA YOSHIYUKI;HIROISHI JOJI;NAKAMURA FUMIO;KONDO TOMOYASU;NAGASHIMA HIDETO;MUKAIDE MASASHI
分类号 C23C14/34;H01L21/285 主分类号 C23C14/34
代理机构 代理人
主权项
地址