发明名称 Semiconductor devices and methods of manufacturing thereof
摘要 Semiconductor devices and methods of manufacturing thereof are disclosed. A preferred embodiment includes a semiconductor device comprising a workpiece, the workpiece including a first region and a second region proximate the first region. A first material is disposed in the first region, and at least one region of a second material is disposed within the first material in the first region, the second material comprising a different material than the first material. The at least one region of the second material increases a first stress of the first region.
申请公布号 US7696019(B2) 申请公布日期 2010.04.13
申请号 US20060371544 申请日期 2006.03.09
申请人 INFINEON TECHNOLOGIES AG 发明人 HAN JIN-PING
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
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