| 摘要 |
<P>PROBLEM TO BE SOLVED: To planarize an insulating film laminated on lower-layer patterns without depending on the layout of the lower-layer patterns. Ž<P>SOLUTION: A liner film 13 and an interlayer dielectric 14 are sequentially formed on each lower-layer pattern 12. Anisotropic etching such as RIE is executed to the interlayer dielectric 14 while using a hard mask 15, which exposes each protrusion of the interlayer dielectric 14, as an etching mask. Then, each protrusion of the interlayer dielectric 14 generated due to each lower-layer pattern 12 is removed while leaving the interlayer dielectric 14 between the lower-layer patterns 12. A coating film 16 is formed on the interlayer dielectric 14 and each lower-layer pattern 12 so as to fill a gap M between the interlayer dielectric 14 and each lower-layer pattern 12. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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