| 摘要 |
A method for forming a semiconductor device (10) includes forming a gate dielectric (14) over a substrate (12), forming a metal electrode (16) over the gate dielectric (14), forming a first sacrificial layer (18) which includes polysilicon or a metal over the metal electrode, removing the first sacrificial layer (17), and forming a gate electrode contact (44) over and coupled to the metal electrode (16). |
