发明名称 |
FLASH MEMORY DEVICE AND SYSTEMS AND READING METHODS THEREOF |
摘要 |
PURPOSE: A flash memory device, a system and a reading method thereof are provided to improve reliability for the reading result of the flash memory by effectively compensating the influence of a coupling generated between adjacent memory cells. CONSTITUTION: A data is read from adjacent memory cells connected to the adjacent word line of selected memory cells(S1000). A coupling compensation parameter is determined based on the data status of the determined adjacent memory cells(S1100). A data is read by applying the determined coupling compensation parameter to each memory cell connected to a selected word line(S1200). The data read from the selected memory cells is selectively latched at each bit line according to the program state of adjacent memory cells(S1300).
|
申请公布号 |
KR20100033192(A) |
申请公布日期 |
2010.03.29 |
申请号 |
KR20080092251 |
申请日期 |
2008.09.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG, SANG GU |
分类号 |
G11C16/26;G11C16/06;G11C16/08;G11C16/24 |
主分类号 |
G11C16/26 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|