发明名称 FLASH MEMORY DEVICE AND SYSTEMS AND READING METHODS THEREOF
摘要 PURPOSE: A flash memory device, a system and a reading method thereof are provided to improve reliability for the reading result of the flash memory by effectively compensating the influence of a coupling generated between adjacent memory cells. CONSTITUTION: A data is read from adjacent memory cells connected to the adjacent word line of selected memory cells(S1000). A coupling compensation parameter is determined based on the data status of the determined adjacent memory cells(S1100). A data is read by applying the determined coupling compensation parameter to each memory cell connected to a selected word line(S1200). The data read from the selected memory cells is selectively latched at each bit line according to the program state of adjacent memory cells(S1300).
申请公布号 KR20100033192(A) 申请公布日期 2010.03.29
申请号 KR20080092251 申请日期 2008.09.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG, SANG GU
分类号 G11C16/26;G11C16/06;G11C16/08;G11C16/24 主分类号 G11C16/26
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