| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device capable of reducing a color mixture to a level not causing any problems practically even if a pixel section size is in the order of 1μm. <P>SOLUTION: In the solid-state imaging device having a number of pixel sections arranged above a p-type silicon substrate 1, the pixel section includes a photoelectric conversion section (a lower electrode 6, a photoelectric conversion layer 7, and an upper electrode 8) provided above the p-type silicon substrate 1, and a color filter 10 provided above the photoelectric conversion section. The solid-state imaging device also has a partition wall 11, for preventing light entering the color filter 10 of the pixel section from entering an adjacent pixel section, between the color filters 10 of the adjacent pixel sections. The partition wall 11 is provided between the color filters 10 of adjacent pixel sections so as to cover the side of the color filter 10. The pixel section includes a protective layer 9 for protecting the photoelectric conversion section provided between the color filter 10 and the upper electrode 8. The thickness of the protective layer 9 is >0μm and≤1.0μm. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
