| 摘要 |
PURPOSE: A method for forming a shallow-trench isolation is provided to maintain an element property by adjusting the target depth through the loss of the upper part of a liner nitride layer and adjusting the thickness of a liner oxide layer. CONSTITUTION: An oxide layer(200) and a nitride layer are successively deposited on a semiconductor substrate(100). A shallow-trench isolation(STI) is formed. A high temperature oxide layer(400) is formed in the STI. A liner nitride layer(500) is deposited on the upper side of the high temperature oxide layer and the substrate. An insulation layer(600) is filled in the STI. The insulation layer is planarized using the nitride layer as an anti- etching layer. The nitride layer is removed by a wet-etching process. The oxide layer is removed. An additional filling material(800) is filled in the upper of the liner nitride layer. The wet-etching or planarization process is performed to remain the additional filling material in the loss area of the linear nitride layer.
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