发明名称 Materials for and methods of manufacturing semiconductor devices
摘要 Etch-resistant solder for attaching leads to semiconductor materials consist of 85 per cent or more of gold, up to 15 per cent of the semiconductor material, and 0.1-1.5 per cent of an impurity element of Group III or V. The semiconductor may be germanium or silicon and the impurity aluminium, gallium, indium, arsenic or antimony. Typical compositions are (1) 87.5-99.9 per cent gold, 0-12 per cent germanium, 0.1-0.5 per cent antimony; and (2) 91-99.9 per cent gold, 0.8 per cent silicon, 0.1-1 per cent antimony. Alloys described for diffusing impurities into silicon transistors are (1) 80 per cent aluminium, 20 per cent gallium; and (2) 95 per cent gold, 5 per cent gallium, aluminium or indium.
申请公布号 GB809877(A) 申请公布日期 1959.03.04
申请号 GB19560035783 申请日期 1956.11.22
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 CORNELISON BOYD;JONES MORTON EDWARD;LINEBACK JAMES TAYLOR;JR. ELMER ALBERT WOLFF,;HORAK FRANK ADOLPH;INCE NORMAN SHIRLEY;JR. SAMUEL WRIGHT BARCUS,
分类号 B23K35/30;H01L21/00;H01L23/488;H01L23/495 主分类号 B23K35/30
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