| 摘要 |
PROBLEM TO BE SOLVED: To improve uniformity of a dielectric film by eliminating incubation time when forming the dielectric film by Chemical Vapor Deposition (CVD) method on a silicon (Si) substrate surface covered with a thin molecular layer of an insulator and to control composition of the dielectric film in the thickness direction. SOLUTION: A method of forming a dielectric film on an Si substrate includes a first step of substantially uniformly adsorbing a first metallic vapor molecular compound on the Si substrate to cover the Si substrate with the first metallic vapor molecular compound, a second step of decomposing the first metallic vapor molecular compound covering the Si substrate in an oxidizing atmosphere to form a first dielectric molecular layer including the first metal on the Si substrate, a third step of substantially uniformly adsorbing a second metallic vapor molecular compound on the Si substrate to cover the Si substrate with the second metallic vapor molecular compound, a fourth step of decomposing the second metallic vapor molecular compound covering the Si substrate in an oxidizing atmosphere to form a second dielectric molecular layer including the second metal on the first dielectric molecular layer. COPYRIGHT: (C)2010,JPO&INPIT
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