| 摘要 |
<p>A metal wiring of a semiconductor device and a manufacturing method thereof are provided to perform a low resistance required for a device by forming a metal wiring composed of a first wiring and a second wiring. An interlayer insulation film(20) including a device is formed on a semiconductor substrate(10). A first insulation film(40) including a first wiring(33) is formed on the interlayer insulation film. A second insulation film(60) including a second wiring(53) is formed on the first insulation film including the first wiring. The second wiring is formed on the first wiring in order to contact with the fist wiring. The first wiring is formed by laminating Ti/TiA/Al. The second wiring is formed by laminating Al/Ti/TiN. The Al of the first wiring is connected to the Al of the second wiring. Width of the second wiring is narrower than width of the first wiring.</p> |
