| 摘要 |
PURPOSE: A method for forming a poly-silicon layer and a method for manufacturing a semiconductor device using the same are provided to prevent the property of the semiconductor device from deteriorating due to a thermal stress by forming a poly-silicon layer with a low-temperature thermal treatment process. CONSTITUTION: A metal layer(12) including silicon is formed on a silicon layer(11). A silicon layer(13) is formed on the metal layer. A thermal treatment process is performed to form a poly- silicon layer(14) inside the metal layer. Residual silicon layer and metal layer are removed. The thermal treatment process is performed at the temperature between 200 to 350°C.
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