发明名称 Capacitor integration at top-metal level with a protective cladding for copper surface protection
摘要 An on-chip decoupling capacitor (106) and method of fabrication. The decoupling capacitor (106) is integrated at the top metal interconnect level (104) and includes surface protection cladding (109) for the copper metal (104b) of the top metal interconnect.
申请公布号 US7674682(B2) 申请公布日期 2010.03.09
申请号 US20030697138 申请日期 2003.10.30
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 BURKE EDMUND;PAPA RAO SATYAVOLU S.;ROST TIMOTHY A.
分类号 H01L21/331;H01L21/02;H01L23/522 主分类号 H01L21/331
代理机构 代理人
主权项
地址
您可能感兴趣的专利