发明名称 COATING AND DEVELOPING METHOD, AND COATING AND DEVELOPING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a coating and developing method, and a coating and developing device for suppressing defective development caused by deposition of residue to a resist surface when a resist is applied and the development is performed after exposure to form a resist pattern. <P>SOLUTION: The coating and developing method comprises: a step of applying a resist liquid to the surface of a wafer W to form a resist film; a step of exposing the surface of the wafer W on which the resist film is formed; and a step of supplying acidic alcohol L onto the surface of the exposed wafer W to dissolve a part of low molecular layer of the resist film formed on the surface of the wafer and, further, to enhance solubility of the low molecular layer for developing liquid used for development which is performed on and after. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010044233(A) 申请公布日期 2010.02.25
申请号 JP20080208452 申请日期 2008.08.13
申请人 TOKYO ELECTRON LTD 发明人 MOTOTAKE KOICHI;KYODA HIDEJI;KITANO JUNICHI
分类号 G03F7/38;G03F7/16;G03F7/30;G03F7/32;H01L21/027 主分类号 G03F7/38
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