| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a compound semiconductor epitaxial wafer, capable of always placing the inner wall surface of a reaction tube, the growth surface of a susceptor and the growth surface of a substrate on the same plane to prevent the film thickness of an epitaxial wafer from being unequal in the wafer plane. Ž<P>SOLUTION: The apparatus 1 for manufacturing a compound semiconductor epitaxial wafer includes, in a reactor 8, a disc-like susceptor 3 on which a plurality of substrates 2 are arranged along a circumferential direction; a rotating mechanism for rotating the susceptor 3 horizontally around the center axis; and a reaction tube 6 having an opening 6b on the growth surface 3a side of the susceptor 3 and supplying a material gas in a direction horizontal to the growth surface 2a of the substrate 2 arranged on the susceptor 3 to phase-epitaxially growing. In the apparatus 1, the outer circumferential surface of the susceptor 3 facing the reaction tube 6 side is brought into contact with the outer circumferential surface of the opening tube 6b of the reaction tube 6 via a bearing ball 15. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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