发明名称 METHOD FOR FORMING PATTERN
摘要 <P>PROBLEM TO BE SOLVED: To form a film onto a desired micro pattern by electrodeposition in a state free from waste. Ž<P>SOLUTION: First, an electrodeposition liquid 152 is accommodated in a container 151, and faces forming a metal pattern 104 of a substrate 101 are opposingly disposed in an opposing electrode 153 made of platinum in the electrodeposition liquid 152. In this state, a positive voltage is applied to the opposing electrode 153; and a negative voltage is applied to a seed layer 102 by a constant voltage supply 154. Here, a necessary wiring is connected to a metal pattern 105, so that the negative voltage is applied to the seed layer 102. By this cationic electrodeposition, an electrodeposition component in the electrodeposition liquid 152 is attached (deposited) onto a face (upper face) onto which the metal pattern 104 and the metal pattern 105 are exposed to form an electrodeposition insulating film 106. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010040693(A) 申请公布日期 2010.02.18
申请号 JP20080200550 申请日期 2008.08.04
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 SATO NORIO;SAKATA TOMOMI;ISHII HITOSHI;ONO KAZUYOSHI
分类号 H01L21/3205;C23C28/00;C25D5/02;C25D13/00;H01L21/288 主分类号 H01L21/3205
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