| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has a side electrode formed by a method of easily forming the side electrode, and to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor device 1 has the side electrode 6 on the side surface of a resin 8 sealing an optical detecting semiconductor element 2. The side electrode 6 is formed by forming a metal thin film 32 having an electrode pattern with a predetermined pitch and then depositing a plated layer on the surface of the metal thin film 32. For example, the side surface of the resin 8 is coated with the resist 31, and the applied resist 31 is exposed, and the exposed resist 31 is developed to form the metal thin film 32 on the side surface. Then, the resist 31 is removed and the plated film 6 is formed on the metal thin film 32 to provide the side electrode. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
