| 摘要 |
<p>An energy-enhanced, low-temperature growth technique is used for direct deposition of periodic table column III nitrides-based negative electron affinity (NEA) photocathodes on standard glass microchannel plates (MCPs). As working examples, low-temperature RF plasma-assited molecular beam epitaxy growth (MBE) of p-type GaN layers on saphire, quartz, and glass and alumina MCPs and their photoemission characterization is disclosed.</p> |
