发明名称 |
DEVICES BASED ON SI/NITRIDE STRUCTURES |
摘要 |
A nitride-based semiconductor device is provided. The nitride-base semiconductor device includes a substrate comprising one or more locally etched regions and a buffer layer comprising one or multiple InAlGaN layers on the substrate. A channel layer includes GaN on the buffer layer. A barrier layer includes one or multiple AlGaN layers on the channel layer.
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申请公布号 |
US2010032717(A1) |
申请公布日期 |
2010.02.11 |
申请号 |
US20090577892 |
申请日期 |
2009.10.13 |
申请人 |
PALACIOS TOMAS;CHUNG JINWOOK |
发明人 |
PALACIOS TOMAS;CHUNG JINWOOK |
分类号 |
H01L29/778;H01L21/335;H01L29/205 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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