MANUFACTURING METHOD OF GROUP III-V COMPOUND SEMICONDUCTOR, SCHOTTKY BARRIER DIODE, LIGHT-EMITTING DIODE, LASER DIODE AND MANUFACTURING METHOD OF THESE MANUFACTURING METHOD OF GROUP III-V COMPOUND SEMICONDUCTOR, SCHOTTKY BARRIER DIODE, LIGHT-EMITTING DIODE, LASER DIODE AND MANUFACTURING METHOD OF THESE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a group III-V compound semiconductor, which reduces n-type carrier density, and also to provide a Schottky barrier diode, a light-emitting diode, a laser diode, and the manufacturing methods of them.

SOLUTION: The method is for manufacturing the group III-V compound semiconductor by organic metal vapor phase epitaxy employing a material containing group III element. At first, a preparation process (S10) for preparing a seed substrate is carried out. An organic metal containing not more than 0.01 ppm of silicon, not more than 10 ppm of oxygen and not more than 0.04 ppm of germanium is then used as a material containing the group III elements to carry out a growth process (S20) for growing the group III-V compound semiconductor on the seed substrate.

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