PLASMA PROCESSING APPARATUS AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

摘要

A plasma processing apparatus is provided with a chamber maintained at a predetermined potential, a substrate stage for holding a substrate in the chamber, an electrode for generating plasma in the chamber by the application of alternating-current power, a conductive member constituted such that the member surrounds a plasma space between the substrate stage and the electrode, thereby connecting the substrate stage and a sidewall of the chamber when the plasma is formed, and can form an opening for introducing the substrate to the substrate stage by the separation of at least part of the member due to the movement thereof by a driving mechanism when the plasma is not formed, and an adhesion preventing shield covering the surface on the plasma space side of the conductive member.