METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A metal wiring forming method of a semiconductor device is provided to reduce the resistance of a contact plug by using a barrier film formed in a following trench bottom side and a sidewall. CONSTITUTION: A first insulating layer(101) with a contact hole is formed on a semiconductor substrate(100). A contact plug(104) is formed by filling the contact hole with a conducting material. A second insulating layer(106) is formed on an overall structure including the contact plug. A trench exposing the top part of the contact plug by etching the second insulating layer is formed. The seam in the contact plug is exposed. The inside of the contact plug is filled with the seam. A barrier film(107) is formed in a sidewall and a bottom side of the trench. A metal wiring(108) is formed by filling a conducting material inside the trench including the barrier film.