| 摘要 |
In the semiconductor light emitting device manufacturing method, a surface of a substrate, on which the semiconductor light emitting device is to be manufactured, is etched, thus forming a plurality of deep trenches. Semiconductor films are sequentially grown on the surface of the substrate in which the deep trenches are formed. The deep trenches are formed to have predetermined depth, so that, even if the semiconductor films are grown on the surface of the substrate, voids are formed in regions of the substrate in which the trenches are formed, and the voids are used as reflectors for light generated by the semiconductor light emitting device.
|
