METHOD OF MAKING A NONVOLATILE MEMORY DEVICE

摘要

A method of making a semiconductor device includes forming a pillar shaped semiconductor device surrounded by an insulating layer (108) such that a contact hole (111) in the insulating layer exposes an upper surface of the semiconductor device. The method also includes forming a shadow mask layer (302) over the insulating layer (108) such that a portion of the shadow mask layer (302) overhangs a portion of the contact hole (111), forming a conductive layer such that a first portion (304) of the conductive layer is located on the upper surface of the semiconductor device exposed in the contact hole and a second portion (306) of the conductive layer is located over the shadow mask layer (302), and removing the shadow mask layer (302) and the second portion (306) of the conductive layer.