| 摘要 |
PURPOSE: A method of forming a semiconductor device is provided to wide an upper width of a spacer by forming an insulating layer having the etching speed faster than the spacer. CONSTITUTION: In a method of forming a semiconductor device, Gate lines are formed on a semiconductor substrate(100). A spacer(112) is formed in the sidewall of the gate lines. A buffer layer(114) is formed along the surface of the gate lines and the spacer. A sacrificing layer(116) is formed on the top of the spacer and the gate lines. An etching process widens the top width of the spacer while eliminating the sacrificing layer.
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