METHOD, APPARATUS, AND PROGRAM FOR MANUFACTURING SILICON STRUCTURE

摘要

PROBLEM TO BE SOLVED: To achieve an excellent sidewall shape together with high perpendicularity in the anisotropic dry etching of silicon having an etching stop layer. SOLUTION: A method of manufacturing a silicon structure has step (c) of etching a silicon region using a low-speed etching condition having the etching speed of the condition of the lowest etching speed among transition etching conditions through etching step (b) using the transition etching condition that the etching speed lowers with the lapse of time from the etching speed of a high-speed etching condition before the place of the highest etching speed in the silicon region is etched up to the etching stop layer by step (a) of performing etching using the high-speed etching condition in the step of dry etching by so-called gas switching. COPYRIGHT: (C)2010,JPO&INPIT