发明名称 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 PURPOSE: The manufacturing method of capacitor prevents phenomenon successively forms the first and misaligned second open parts on the insulating layer. CONSTITUTION: The manufacturing method of capacitor comprises the first insulating layer(11), and the formation steps of the capping layer and the first open part(13). The formation step of the first insulating layer operates in order to form the first insulating layer on the top of the substrate. The formation step of the first open part operates in order to form the first open part (open portion) passing through the first insulating layer. The formation step of the capping layer operates in order to form the capping layer on the first open part. The formation step of the second insulating layer operates in order to form the second insulating layer on the first insulating layer and capping layer. The second open part exposes the first insulating layer and capping layer.
申请公布号 KR20100003070(A) 申请公布日期 2010.01.07
申请号 KR20080063171 申请日期 2008.06.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHO, JUN HEE
分类号 H01L27/108 主分类号 H01L27/108
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