IMAGE SENSOR FOR X-RAY AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: An image sensor for an X-ray and a manufacturing method thereof are provided to prevent the deformation like warpage or twist of a substrate after depositing a thick film and performing a high temperature process using the metal material with high melting point and small thermal expansion coefficient. CONSTITUTION: A thin film transistor is formed after forming a buffer layer(116) on a metal substrate with the thickness of 0.2 to 5 mm. A protection layer is formed to cover the thin film transistor. A contact hole is formed to expose a gate contact electrode(222) connected to the gate electrode of the thin film transistor. A first electrode connected to the gate contact electrode is formed on the protection layer through the contact hole. A semiconductor layer of a photo diode is formed on the first electrode. A second electrode(232) is formed on the semiconductor layer. The common electrode is formed to connect to the second electrode. A metal substrate with the thin film transistor, the photo diode, and the common electrode has the thickness of 20 to 200 um.