发明名称 LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD
摘要 <p>PURPOSE: A lithography device and a method for manufacturing the device are provided to induce the reduction of ellipticity about an image of a contact hole by applying the first and second phase changes. CONSTITUTION: An illuminator(IL) conditions a radiation beam to an illumination mode. The illumination mode includes an off-axis radiation beam generated from an illumination pole. A support(MT) supports a patterning device(MA). A substrate table(WT) maintains the substrate(W). The substrate table is connected to a second position setter to set the substrate according to preset parameter. A projection system(PS) projects the pattern given to the radiation beam by the patterning device to a target unit of the substrate. A phase adjuster(110) adjusts the phase of an electric field of the radiation beam. The controller searches for the data showing the pattern or illumination mode and identifies the region crossing the pupil plane. The controller optimizes the image characteristic of an image of the pattern. The controller maps the region in a part of optical elements. The controller changes the refractive index of the optical element according to the optical phase.</p>
申请公布号 KR20100002143(A) 申请公布日期 2010.01.06
申请号 KR20090055987 申请日期 2009.06.23
申请人 ASML NETHERLANDS B.V. 发明人 FINDERS JOZEF MARIA
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
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