| 摘要 |
A method of manufacturing a semiconductor device includes forming, over a substrate, a gate insulating film containing a high-k insulating film which is composed of a material having a dielectric constant larger than that of silicon dioxide film; forming a gate electrode containing a metal over the gate insulating film; forming extension regions by implanting an dopant into the substrate using the gate electrode as a mask; and annealing the substrate, having the dopant implanted therein, by flash lamp annealing or laser annealing; wherein the annealing further includes: a first step irradiating a substrate with a light pulse having a predetermined peak intensity; and a second step irradiating a substrate with light pulses having peak intensities lower than that of the light pulse used in the first step.
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