发明名称 BANDGAP REFERENCE VOLTAGE GENERATOR
摘要 <p>A bandgap reference voltage generator (500). The bandgap reference voltage generator (500) includes a voltage generator circuit (510) for generating a voltage in response to temperature, a voltage level optimization circuit (520) and a reference voltage generator circuit (530). A first voltage (VPTAT) and a second voltage (Vbe) are generated by the voltage generator circuit (510). A current component increased with the temperature increment is generated by the first voltage (VPTAT). A current component decreased with the temperature increment is generated by the second voltage (Vbe). A third voltage (MVbe) which is obtained by optimizing the voltage level of the second voltage (Vbe) is generated by the voltage level optimization circuit (520). A reference voltage of a certain voltage level independent of temperature is generated by the reference voltage generator circuit (530) based on the first voltage (VPTAT) and the third voltage (MVbe).</p>
申请公布号 WO2009149650(A1) 申请公布日期 2009.12.17
申请号 WO2009CN72177 申请日期 2009.06.08
申请人 SILICON MOTION, INC.;SILICON MOTION, INC.;FCI INC.;BECK, SUNG-HO;JEONG, SEONG-HEON;HWANG, MYUNG-WON 发明人 BECK, SUNG-HO;JEONG, SEONG-HEON;HWANG, MYUNG-WON
分类号 G05F3/20 主分类号 G05F3/20
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