| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To pass a cell source line and a cell well line within a cell array region so as to reduce resistance of the cell source line and the cell well line, in a word line direction, and capable of passing also a power supply line in a bit line direction. <P>SOLUTION: A nonvolatile semiconductor memory device includes a cell array including a memory string arranged in a matrix shape, a bit line connected to the memory string, a first wire connected to a cell source line of a memory cell, a second wire connected to a cell well line of a memory cell, a third wire which supplies a power supply voltage to a circuit arranged outside of a region of the cell array, a fourth wire and a fifth wire arranged along a forming direction of a bit line. The first wire, the second wire and the third wire are formed in a layer above a layer in which the bit line within the cell array region is formed, the fourth wire and the fifth wire are formed in a layer in which the bit line is formed, the first wire and the fourth wire are connected, and the second wire and the fifth wire are connected. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
