METHOD OF MANUFACTURING PHASE CHANGE MEMORY DEVICE HAVING BOTTOM ELECTRODE CONTACT LAYER

摘要

PURPOSE: A method of manufacturing a phase change memory device having a bottom electrode contact layer is provided to extend a contact area of a switch device and the bottom electrode larger than a contact area of a phase change film and the bottom electrode, so securing enough current from a switching device. CONSTITUTION: In a method of manufacturing a phase change memory device having a bottom electrode contact layer, a first interlayer insulating film(110) is formed on a semiconductor substrate(100). A PN diode(115) including an ohmic contact(120a) is formed on a first interlayer insulating film. A second interlayer dielectric(125) including a first bottom contact hole(135) to expose a part of an ohmic contact to the outside. The second bottom electrode contact hole has the first bottom electrode contact hole inside the ohmic contact layer and has wider width than the first bottom electrode contact hole. The ohmic contact is etched as second interlayer dielectric and groove is formed inside it.