发明名称 CHEMICAL VAPOR DEPOSITION APPARATUS
摘要 PURPOSE: A chemical vapor deposition apparatus is provided to arrange a guide ring at the edge of wafer uniform by moving a stationary chuck in the X direction and Y direction and controlling the center of the wafer. CONSTITUTION: In a chemical vapor deposition apparatus, a stationary chuck(11) holds a wafer(10) and arranges the wafer according to a fixed position of a wafer. A measurement unit(13) measures the position of the wafer on the stationary chuck and controls the stationary chuck. A guide ring(14) prevents a deposition film from being deposited on the around the wafer in a deposition process. The measure unit measures a distance from the wafer in contactless, and the measure unit uses a range meter using an infrared ray. The stationary chuck controls the position of the wafer so that the edge of wafer is arranged at the guide ring uniformly.
申请公布号 KR20090122694(A) 申请公布日期 2009.12.01
申请号 KR20080048632 申请日期 2008.05.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 ROH, CHI HYEONG
分类号 H01L21/205 主分类号 H01L21/205
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